nsulated Gate Bipolar Transistor (IGBT), is a type of semiconductor device, which is primarily used for applications larger than 600V: switching power supplies in high-power applications: variable-frequency drives (VFDs), electric cars, trains, variable speed refrigerators, lamp ballasts, arc-welding machines, and air conditioners. A traditional BJT has a high output current but a large drive power consumption and low switching (operating) frequency while a MOSFET has a low drive power consumption and high switching (operating) frequency but a small output current. IGBT combines the advantages of the two devices: high output current, low drive power consumption, and middle switching (operating) frequency.

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