Si-based power MOSFET is a unipolar, voltage-controlled device, which is characterized primarily by the following : Fast switching speed, good operating frequency, high input impedance, low drive power, excellent thermal stability, no secondary breakdown issues, wide working range and high linearity...etc. The most important advantage of the device is its capability of volume and weight reduction in products, while maintaining the performance of high speed, high power, high voltage, and high gain. Currently, it is widely used in various low-to-medium power switching circuits.
